Boiling Point: 43.4°

EINECS Number: 212-745-0

Melting Point: -88°

Molecular Weight: 132.73

Specific Gravity: 0.975

Flashpoint: -19°C (-2°F)

HMIS Key: 2-4-0-X

Formula: C₄H₁₂Ge

Refractive Index: 1.3871

Application: Source of GeO₂ films by PECVD.¹
Ionization currents / free ions on exposure to ?-rays suggest utilization in detectors.^2,3
Forms amorphous GeC:H films by CVD with negative bias.⁴

Reference: 1. Reich, S. et al. Thin Solid Films 1990, 189, 293.
2. Geer, S. Nucl. Instrum. Methods Phys. Res., Sec. A 1990, A287, 447.
3. Holroyd, R. et al. Phys. Rev. B: Condens. Matter 1991, 43, 9003.
4. Grill, A. et al. J. Mater. Res. 2002, 17, 367.

Additional Properties: Dielectric constant, 25?C: 1.82
Surface tension, 25?: 24 dynes/cm
Critical temperature: 493.1?K
?Hfus: 1.78 kcal/mole
Critical pressure: 27.7 atm
?Hvap: 6.3 kcal/mole
Vapor pressure, 0?: 139 mm
Vapor pressure